 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SHINDENGEN Super Fast Recovery Rectifiers Single M1FL20U 200V 1.1A FEATURES OUTLINE DIMENSIONS Case : M1F i Unit : mm *oe SMT Small *oe Low noise *oe trr35ns APPLICATION *oe Switching power supply *oe DC/DC converter *oe Free Wheel *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 200 V Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25*Z On alumina substrate IO 1.1 A 50Hz sine wave, R-load, Ta=25*Z On glass-epoxy substrate 0.75 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z A 30 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =1.1A, Pulse measurement Reverse Current IR V=200V, Pulse measurement R Reverse Recovery Time =0.5A,*@ I =1A trr IF R AEjl junction to lead Thermal Resistance AEja junction to ambient On alumina substrate junction to ambient On glass-epoxy substrate Ratings Unit Max.0.98 V Max.10 EA Max.35 ns Max.20 Max.108 *Z/W Max.186 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd M1FL20U Forward Voltage 10 Forward Current IF [A] 1 Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] Pulse measurement per diode 0.1 0 0.5 1 1.5 2 Forward Voltage VF [V] M1FL20U 2 Forward Power Dissipation Forward Power Dissipation PF [W] DC 1.5 SIN 0.3 1 0.1 0.05 0.2 0.5 D=0.8 0.5 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T M1FL20U 2 Derating Curve Average Rectified Forward Current IO [A] DC 1.5 0.5 SIN 1 0.3 0.2 0.1 0.5 0.05 D=0.8 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM IO 0 0 VR tp D=tp /T T M1FL20U 1.2 Derating Curve Average Rectified Forward Current IO [A] DC 1 0.5 0.8 SIN 0.3 0.6 0.2 D=0.8 Glass-epoxy substrate Soldering land 2mm Conductor layer 35m 0.4 0.1 0.05 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM IO 0 0 VR tp D=tp /T T M1FL20U 50 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 40 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] M1FL20U Junction Capacitance f=1MHz Tl=25C TYP per diode 100 Junction Capacitance Cj [pF] 10 1 1 10 100 Reverse Voltage VR [V] |
Price & Availability of M1FL20U
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |